BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 5

RF MOSFET Small Signal RF LDMOS 65V 100A

BLF369,112

Manufacturer Part Number
BLF369,112
Description
RF MOSFET Small Signal RF LDMOS 65V 100A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF369,112

Configuration
Dual Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Resistance Drain-source Rds (on)
0.04 Ohm (Typ) @ 14.5 V
Transistor Polarity
N-Channel
Package / Case
LDMOST
Application
HF/VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
500W
Power Gain (typ)@vds
18@32V/19@32V/19@32VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
15S
Drain Source Resistance (max)
40(Typ)@14.5Vmohm
Input Capacitance (typ)@vds
400@32VpF
Output Capacitance (typ)@vds
230@32VpF
Reverse Capacitance (typ)
15@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059725112 BLF369
NXP Semiconductors
7. Application information
Table 7.
T
[1]
BLF369_4
Product data sheet
Mode of operation
CW, class AB
2-tone, class AB
pulsed, class AB
h
= 25 C unless otherwise specified.
t
p
= 2 ms; = 10 %.
RF performance in a common-source 225 MHz test circuit
[1]
7.1 CW
Fig 3.
f
(MHz)
225
f
225
1
= 225; f
CW power gain and drain efficiency as a function of output power; typical values
2
= 225.1
(dB)
Rev. 04 — 19 February 2009
G
P
22
20
18
16
0
V
(V)
32
32
-
DS
100
I
(A)
2
2
-
Dq
1.0 500
1.0 -
200
P
(W)
500
L
300
Multi-use VHF power LDMOS transistor
G
D
P
P
(W)
-
500
-
L(PEP)
400
001aae501
P
L
G
(dB)
> 17
> 18
> 18
(W)
p
500
70
50
30
10
(%)
(%)
> 55
> 43
> 50
D
D
© NXP B.V. 2009. All rights reserved.
BLF369
IMD3
(dBc)
-
< 24
-
(dB)
-
1
-
G
5 of 17
p

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