BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 5
BLF369,112
Manufacturer Part Number
BLF369,112
Description
RF MOSFET Small Signal RF LDMOS 65V 100A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF369112.pdf
(17 pages)
Specifications of BLF369,112
Configuration
Dual Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Resistance Drain-source Rds (on)
0.04 Ohm (Typ) @ 14.5 V
Transistor Polarity
N-Channel
Package / Case
LDMOST
Application
HF/VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
500W
Power Gain (typ)@vds
18@32V/19@32V/19@32VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
15S
Drain Source Resistance (max)
40(Typ)@14.5Vmohm
Input Capacitance (typ)@vds
400@32VpF
Output Capacitance (typ)@vds
230@32VpF
Reverse Capacitance (typ)
15@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059725112 BLF369
NXP Semiconductors
7. Application information
Table 7.
T
[1]
BLF369_4
Product data sheet
Mode of operation
CW, class AB
2-tone, class AB
pulsed, class AB
h
= 25 C unless otherwise specified.
t
p
= 2 ms; = 10 %.
RF performance in a common-source 225 MHz test circuit
[1]
7.1 CW
Fig 3.
f
(MHz)
225
f
225
1
= 225; f
CW power gain and drain efficiency as a function of output power; typical values
2
= 225.1
(dB)
Rev. 04 — 19 February 2009
G
P
22
20
18
16
0
V
(V)
32
32
-
DS
100
I
(A)
2
2
-
Dq
1.0 500
1.0 -
200
P
(W)
500
L
300
Multi-use VHF power LDMOS transistor
G
D
P
P
(W)
-
500
-
L(PEP)
400
001aae501
P
L
G
(dB)
> 17
> 18
> 18
(W)
p
500
70
50
30
10
(%)
(%)
> 55
> 43
> 50
D
D
© NXP B.V. 2009. All rights reserved.
BLF369
IMD3
(dBc)
-
< 24
-
(dB)
-
1
-
G
5 of 17
p