BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 4

• Manufacturer Part Number: BLF369,112
• Description: RF MOSFET Small Signal RF LDMOS 65V 100A
• Manufacturer: NXP Semiconductors

Specifications of BLF369,112

• Configuration: Dual Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.04 Ohm (Typ) @ 14.5 V
• Transistor Polarity: N-Channel
• Package / Case: LDMOST
• Application: HF/VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 500W
• Power Gain (typ)@vds: 18@32V/19@32V/19@32VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15S
• Drain Source Resistance (max): 40(Typ)@14.5Vmohm
• Input Capacitance (typ)@vds: 400@32VpF
• Output Capacitance (typ)@vds: 230@32VpF
• Reverse Capacitance (typ): 15@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059725112 BLF369

NXP Semiconductors
6. Characteristics
Table 6.
T
[1]
[2]
BLF369_4
Product data sheet
Symbol
V
V
I
I
I
g
R
C
C
C
DSS
DSX
GSS
j
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
= 25 C unless otherwise specified.
I
C
D
iss
is the drain current.
and C
Characteristics
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
oss
include reverse transfer capacitance (C
Fig 2.
V
Output capacitance as a function of drain-source voltage; typical values per
section
GS
= 0 V; f = 1 MHz.
C
Rev. 04 — 19 February 2009
(pF)
Conditions
V
V
V
V
V
V
V
V
V
V
oss
600
400
200
GS
DS
GS
GS
GS
GS
GS
GS
GS
GS
rss
0
).
= 20 V; I
0
= 0 V; I
= 0 V; V
= V
= 20 V; V
= 20 V; I
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
D
10
DS
DS
DS
DS
D
D
= 6 mA
+ 9 V; V
+ 9 V; I
DS
= 600 mA
= 13 A
= 32 V
= 32 V; f = 1 MHz
= 32 V; f = 1 MHz
= 32 V; f = 1 MHz
= 0 V
20
D
DS
= 13 A
= 10 V
Multi-use VHF power LDMOS transistor
30
[1]
[1]
[1]
[1]
[2]
[2]
40
001aae484
V
DS
Min
65
4
-
-
-
-
-
-
-
-
(V)
50
Typ
-
-
-
100
-
15
40
400
230
15
© NXP B.V. 2009. All rights reserved.
BLF369
Max
-
5.5
4.2
-
60
-
-
-
-
-
Unit
V
V
A
nA
S
m
pF
pF
pF
4 of 17
A