BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 11

• Manufacturer Part Number: BLF369,112
• Description: RF MOSFET Small Signal RF LDMOS 65V 100A
• Manufacturer: NXP Semiconductors

Specifications of BLF369,112

• Configuration: Dual Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.04 Ohm (Typ) @ 14.5 V
• Transistor Polarity: N-Channel
• Package / Case: LDMOST
• Application: HF/VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 500W
• Power Gain (typ)@vds: 18@32V/19@32V/19@32VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15S
• Drain Source Resistance (max): 40(Typ)@14.5Vmohm
• Input Capacitance (typ)@vds: 400@32VpF
• Output Capacitance (typ)@vds: 230@32VpF
• Reverse Capacitance (typ): 15@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059725112 BLF369

Fig 14. Class-AB common-source 225 MHz test circuit; V
50
B2
C30
C33
C28
C31
R11
R12
C29
C32
T3
T4
D1(test)
, V
L5
L6
C21
+ V G2(test)
+ V G1(test)
C24
C23
C22
C25
C26
C27
D2(test)
R7
R8
R5
C20
R10
, V
R9
R6
G1(test)
+ V D2(test)
+ V D1(test)
C6
C5
C4
C7
C8
C9
and V
L4
L2
L1
L3
C1
G2(test)
are drain and gate test voltages
T1
T2
C10
C2
C3
C13
C11
C14
R1
R3
R2
R4
B1
C12
C15
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50