BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 6

• Manufacturer Part Number: BLF369,112
• Description: RF MOSFET Small Signal RF LDMOS 65V 100A
• Manufacturer: NXP Semiconductors

Specifications of BLF369,112

• Configuration: Dual Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.04 Ohm (Typ) @ 14.5 V
• Transistor Polarity: N-Channel
• Package / Case: LDMOST
• Application: HF/VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 500W
• Power Gain (typ)@vds: 18@32V/19@32V/19@32VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15S
• Drain Source Resistance (max): 40(Typ)@14.5Vmohm
• Input Capacitance (typ)@vds: 400@32VpF
• Output Capacitance (typ)@vds: 230@32VpF
• Reverse Capacitance (typ): 15@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059725112 BLF369

NXP Semiconductors
BLF369_4
Product data sheet
Fig 4.
Fig 6.
(dB)
(dB)
G
G
P
p
22
20
18
16
20
19
18
17
16
15
0
0
V
I
2-Tone power gain and drain efficiency as a
function of peak envelope power; typical
values
f = 225 MHz; V
Pulsed power gain as function of load power;
typical values
Dq
DS
= 10 %.
= 2
= 32 V; f
7.2 2-Tone
7.3 Pulsed
1.0 A; T
200
1
200
= 225 MHz; f
DS
h
= 32 V; I
= 25 C.
400
Dq
G
2
D
P
= 225.1 MHz;
400
= 2
600
P
L(PEP)
1 A; t
P
001aae502
001aah498
L
(W)
p
(W)
= 2 ms;
Rev. 04 — 19 February 2009
600
800
60
40
20
0
(%)
D
Fig 5.
Fig 7.
IMD3
(dBc)
(%)
D
20
40
60
70
50
30
10
0
0
V
I
2-Tone third order intermodulation distortion
as a function of peak envelope power; typical
values
0
f = 225 MHz; V
Pulsed drain efficiency as function of
load power; typical values
Dq
DS
= 10 %.
= 2
= 32 V; f
Multi-use VHF power LDMOS transistor
1.0 A; T
200
1
200
= 225 MHz; f
DS
h
= 32 V; I
= 25 C.
400
Dq
2
= 225.1 MHz;
400
= 2
600
P
L(PEP)
1 A; t
© NXP B.V. 2009. All rights reserved.
P
001aae503
001aah499
BLF369
L
(W)
(W)
p
= 2 ms;
600
800
6 of 17