BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 14
![RF MOSFET Small Signal RF LDMOS 65V 100A](/photos/40/60/406025/sot800-2_sml.jpg)
BLF369,112
Manufacturer Part Number
BLF369,112
Description
RF MOSFET Small Signal RF LDMOS 65V 100A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF369112.pdf
(17 pages)
Specifications of BLF369,112
Configuration
Dual Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Resistance Drain-source Rds (on)
0.04 Ohm (Typ) @ 14.5 V
Transistor Polarity
N-Channel
Package / Case
LDMOST
Application
HF/VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
500W
Power Gain (typ)@vds
18@32V/19@32V/19@32VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
15S
Drain Source Resistance (max)
40(Typ)@14.5Vmohm
Input Capacitance (typ)@vds
400@32VpF
Output Capacitance (typ)@vds
230@32VpF
Reverse Capacitance (typ)
15@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059725112 BLF369
NXP Semiconductors
9. Package outline
Fig 17. Package outline SOT800-2
BLF369_4
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
SOT800-2
VERSION
OUTLINE
0.248
0.232
H
6.3
5.9
A
U
A
2
10.55
10.45
0.415
0.411
A
L
b
0.006
0.004
0.15
0.10
c
IEC
1.201
1.177
30.5
29.9
D
1.224
1.216
31.1
30.9
D
1
0.575
0.567
14.6
14.4
JEDEC
E
y
1
3
0.602
0.594
15.3
15.1
REFERENCES
E
1
Rev. 04 — 19 February 2009
U
D
D
q
e
1
1
12.7
0.5
e
0
0.089
0.079
2.26
2.00
JEITA
F
scale
2
4
b
5
0.898
0.858
22.8
21.8
H
10 mm
0.146
0.130
3.7
3.3
L
w2
0.140
0.137
M
3.56
3.49
p
C
Multi-use VHF power LDMOS transistor
5
M
0.122
0.110
3.1
2.8
Q
P
F
B
C
1.516
38.5
w1
q
PROJECTION
EUROPEAN
M
1.752
1.740
44.5
44.2
A
U
1
M
E
B
0.606
0.591
1
15.4
15.0
M
U
2
Q
© NXP B.V. 2009. All rights reserved.
0.25
0.01
w
BLF369
1
ISSUE DATE
c
05-06-02
05-06-07
0.25
0.01
w
E
2
SOT800-2
0.002
0.05
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y