NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 13

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

NAND01G-B2B, NAND02G-B2C
Figure 5.
Block
Page
Memory array organization
2048 bytes
Main area
Page buffer, 2112 bytes
2,048 bytes
Block = 64 pages
Page = 2112 bytes (2,048 + 64)
x8 DEVICES
bytes
bytes
64
64
8 bits
8 bits
Block
Page
1024 words
1,024 words
Main area
Page buffer, 1056 words
Block = 64 pages
Page = 1056 words (1024 + 32)
x16 DEVICES
Memory array organization
words
words
32
32
16 bits
16 bits
AI09854
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