NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 18

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

Bus operations
18/60
Table 7.
1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2-Gbit devices. A27 is for 2-Gbit devices only.
Table 8.
Table 9.
cycle
5
Bus
2
3
1
4
th(2)
nd
st
rd
th
(1)
A12 - A17
A18 - A27
A18 - A28
A11 - A16
A17 - A26
A17 - A27
I/O15
I/O8-
Address
A0 - A11
Address
A0 - A10
X
X
X
X
X
Address insertion, x16 devices
Address definitions, x8
Address definitions, x16
I/O7
A18
A26
V
V
A7
IL
IL
I/O6
A17
A25
V
V
A6
IL
IL
I/O5
A16
A24
Block address
Block address
Block address
Block address
V
V
A5
IL
IL
I/O4
A15
A23
A4
V
V
IL
IL
Column address
Column address
Page address
Page address
Definition
Definition
I/O3
A14
A22
V
V
A3
NAND01G-B2B, NAND02G-B2C
IL
IL
I/O2
A10
A13
A21
V
A2
IL
1-Gbit device
2-Gbit device
1-Gbit device
2-Gbit device
I/O1
A12
A20
V
A1
A9
IL
I/O0
A11
A19
A27
A0
A8