NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 59

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

NAND01G-B2B, NAND02G-B2C
14
Revision history
Table 30.
18-May-2006
23-Nov-2006
01-Jun-2006
09-Jun-2006
20-Apr-2007
14-Apr-2008
Date
Document revision history
Version
0.1
1
2
3
4
5
Initial release.
Document status changed to preliminary data.
VFBGA63 9 x 11 x 1 mm package added for NAND01G-B2B devices
and VFBGA63 9.5 x 12 x 1 mm dedicated to NAND02G-B2C devices.
Note 2 below
Overview of
concerning Exit Cache Read command updated in
read. Block replacement section replaced by
memory failure
t
data
RB waveform updated in
waveforms, and CL waveform modified in
waveforms.
An error correction code (ECC) is required to obtain a data integrity of
100 000 program/erase cycles per block.
Section 3.9: Ready/Busy (RB)
t
Table 25: AC characteristics for
Note removed below
t
program.
Alt. symbol for t
operations.
Applied Numonyx branding.
WHALL
RHRL2
WHBH2
input.
timing removed from
added in
replaced by t
Section 6.1: Read memory array
Commands
modes.
BLBH4
Table 24: AC characteristics for command, address,
BLBH5
Figure 11: Copy back
is t
RST
Figure 25: Page read operation AC
removed.
, cash busy time, in
Figure 9: Page program operation
in
modified.
Changes
Table 25: AC characteristics for
operations.
Figure 26: Page program AC
program.
Section 8.2: NAND flash
updated. Paragraph
Section 6.5: Cache
Section 6.2: Cache
Revision history
and
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