NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 49

IC, FLASH, 1GB, 25µS, TSOP-48

NANDO1GW3B2CN6

Manufacturer Part Number
NANDO1GW3B2CN6
Description
IC, FLASH, 1GB, 25µS, TSOP-48
Manufacturer
NUMONYX
Datasheet

Specifications of NANDO1GW3B2CN6

Memory Type
FLASH
Memory Size
1GB
Access Time
25µS
Supply Voltage Range
2.7V TO 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C TO +85°C
Voltage, Vcc
3.3V
Memory Configuration
128M X 8
Rohs Compliant
Yes
NAND01G-B2B, NAND02G-B2C
Figure 25. Page read operation AC waveforms
1. A fifth address cycle is required for 2-Gbit devices only.
RB
I/O
CL
AL
W
E
R
Command
Code
00h
cycle 1
Add.N
tWLWL
Address N Input
cycle 2
Add.N
cycle 3
Add.N
cycle 4
Add.N
tWHBH
cycle 5
Add.N
tWHBL
tBLBH1
30h
Busy
from Address N to Last Byte or Word in Page
tRLRH
Data
tALLRL2
N
Data
N+1
(Read Cycle time)
Data Output
tRLRL
Data
N+2
DC and AC parameters
tEHQZ
tRHQZ
Data
Last
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