NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 21

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

NAND01G-B2B, NAND02G-B2C
Figure 6.
1. Highest address depends on device density.
RB
I/O
CL
AL
W
R
E
Read operations
Command
code
00h
Address input
tBLBH1
Command
code
30h
Busy
Data output (sequentially)
Device operations
ai08657b
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