NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 25

IC, FLASH, 1GB, 25µS, TSOP-48

NANDO1GW3B2CN6

Manufacturer Part Number
NANDO1GW3B2CN6
Description
IC, FLASH, 1GB, 25µS, TSOP-48
Manufacturer
NUMONYX
Datasheet

Specifications of NANDO1GW3B2CN6

Memory Type
FLASH
Memory Size
1GB
Access Time
25µS
Supply Voltage Range
2.7V TO 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C TO +85°C
Voltage, Vcc
3.3V
Memory Configuration
128M X 8
Rohs Compliant
Yes
NAND01G-B2B, NAND02G-B2C
Figure 9.
Figure 10. Random data input during sequential data input
RB
I/O
Row Add 1,2,3
RB
I/O
Code
Cmd
80h
Page program operation
Page Program
Setup Code
5 Add cycles
Address
Inputs
Col Add 1,2
80h
Main area
Data Intput
Address Inputs
Spare
Code
area
Cmd
85h
2 Add cycles
Address
Col Add 1,2
Inputs
Data Input
Data Input
(Program Busy time)
(Program Busy time)
Confirm
Code
10h
tBLBH2
tBLBH2
Confirm
Code
10h
Main area
Busy
Busy
Read Status Register
Read Status Register
Device operations
70h
Spare
70h
area
SR0
SR0
ai08659
ai08664
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