NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 54

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

DC and AC parameters
Figure 33. Resistor value versus waveform timings for Ready/Busy signal
1. T = 25°C.
11.2
Figure 34. Data protection
54/60
400
300
200
100
0
1
30
1.7
1.7
Data protection
The Numonyx NAND device is designed to guarantee data protection during power
transitions.
A V
In the V
low (V
figure.
DD
V DD
W
V DD = 1.8V, C L = 30pF
IL
detection circuit disables all NAND operations, if V
DD
) to guarantee hardware protection during power transitions as shown in the below
2
1.7
0.85
60
Nominal Range
range from V
R P (K
V LKO
3
Locked
0.57
1.7
90
LKO
t f
to the lower limit of nominal range, the WP pin should be kept
4
0.43
1.7
120
2
1
3
4
t r
400
300
200
100
Locked
0
1
100
3.6
2.4
ibusy
V DD = 3.3V, C L = 100pF
2
DD
NAND01G-B2B, NAND02G-B2C
200
3.6
1.2
is below the V
R P (K
Ai11086
3
300
3.6
0.8
LKO
threshold.
400
4
3.6
2
1
3
4
0.6
ai07565B