NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 50

IC, FLASH, 1GB, 25µS, TSOP-48

NANDO1GW3B2CN6

Manufacturer Part Number
NANDO1GW3B2CN6
Description
IC, FLASH, 1GB, 25µS, TSOP-48
Manufacturer
NUMONYX
Datasheet

Specifications of NANDO1GW3B2CN6

Memory Type
FLASH
Memory Size
1GB
Access Time
25µS
Supply Voltage Range
2.7V TO 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C TO +85°C
Voltage, Vcc
3.3V
Memory Configuration
128M X 8
Rohs Compliant
Yes
DC and AC parameters
Figure 26. Page program AC waveforms
1. A fifth address cycle is required for 2-Gbit devices only.
50/60
RB
CL
I/O
AL
W
R
E
Page Program
Setup Code
80h
tWLWL
(Write Cycle time)
cycle 1
Add.N
cycle 2
Add.N
cycle 3
Add.N
Address Input
cycle 4
Add.N
cycle 5
Add.N
tWLWL
N
tWHWH
Data Input
(Program Busy time)
tWHBL
Last
Confirm
NAND01G-B2B, NAND02G-B2C
tBLBH2
Code
tWLWL
10h
Program
Page
Read Status Register
70h
SR0
ai13110b

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