FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 130

• Manufacturer Part Number: FDR858P
• Description: MOSFET P-CH 30V 8A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR858P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Dc: 9940
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR858P; FDR858PTR

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Rectifiers – HyperFast Recovery Rectifiers
TO-220
RHRP860
RHRP1560
RHRP3060
RHRP8120
RHRP15120
RHRP30120
TO-247
RHRG1560CC
RHRG3060
RHRG3060CC
RHRG5060
RHRG30120
RHRG75120
TO-252(DPAK)
RHRD660S
Products
Common Cathode
Common Cathode
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
RRM
1200
1200
1200
1200
1200
600
600
600
600
600
600
600
600
(V)
I
F (AV)
15
30
15
30
15
30
30
50
30
75
8
8
6
(A)
V
F
2-125
Max (V)
2.1
2.1
2.1
3.2
3.2
1.5
2.1
2.1
2.1
3.2
3.2
2.1
3
Discrete Power Products –
t
rr
Max (ns)
100
35
40
45
70
75
75
60
45
45
50
75
35
I
RM
or I
(µA)
100
100
100
100
100
250
100
100
100
250
100
250
100
R
Max
t
a
Typ (ns)
Diodes and Rectifiers
@125°C
18
20
22
30
36
35
30
22
22
25
48
60
16
t
b
Typ (ns)
@125°C
10
15
18
20
28
33
17
18
18
20
22
25
8