FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 182
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
- Current page: 182 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Discrete IGBTs (Continued)
HGTG40N60B3
HGTG20N60A4
HGTG20N60A4D
HGTG30N60A4
HGTG30N60A4D
FGH50N6S2
FGH50N6S2D
HGTG40N60A4
FGH60N6S2
HGTG5N120BND
HGTG10N120BND
HGTG11N120CN
HGTG11N120CND
HGTG18N120BN
HGTG18N120BND
HGTG27N120BN
TO-251(IPAK)
SGU15N40L
SGU20N40L
TO-252(DPAK)
SGR15N40L
SGR20N40L
SGR2N60UFD
HGTD3N60C3S9A
SGR6N60UF
HGTD7N60C3S
HGTD3N60A4S
HGTD1N120BNS
TO-262(I
HGT1S2N120CN
TO-263(D
SGW5N60RUFD
SGW13N60UFD
HGT1S7N60C3DS
Products
2
2
PAK)
PAK)
BV
CES
1200
1200
1200
1200
1200
1200
1200
1200
1200
600
600
600
600
600
600
600
600
600
400
400
400
400
600
600
600
600
600
600
600
600
Min (V)
I
C
@100°C
130
150
130
150
40
40
40
60
60
60
60
63
75
10
17
22
22
26
26
34
1
3
3
7
8
2
7
5
6
7
V
CE(sat)
2.45
2.45
2.45
2.45
2.45
1.65
2.05
(V)
1.4
1.8
1.8
1.8
1.8
1.9
1.9
1.7
1.9
2.1
2.1
4.5
4.5
4.5
4.5
2.1
2.1
1.6
2.5
2.2
2.1
1.6
2
Typ
2-177
t
f
Typ (ns)
1100
1500
1100
1500
160
140
400
400
140
140
120
275
275
370
360
136
275
50
32
73
38
38
50
90
35
50
95
70
47
97
Short Circut
Bold = New Products (introduced January 2003 or later)
Rated
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
–
Built in Diode
Discrete Power Products –
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
–
Primary Applications
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Power Conversion
Power Conversion
Power Conversion
Power Conversion
Power Conversion
Power Conversion
Power Conversion
Camera Strobe
Camera Strobe
Camera Strobe
Camera Strobe
Motor
Motor
Motor
Motor
Motor
Motor
IGBTs
Related parts for FDR858P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: