FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 97
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
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Small Signal Transistors – Darlington Transistors
SOT-223 NPN Configuration
PZTA29
PZTA27
NZT605
PZTA14
BSP50
BSP51
BSP52
PZTA28
NZT7053
SOT-223 PNP Configuration
PZTA64
SOT-23 NPN Configuration
KST13
KST14
MMBTA13
BCV27
MMBTA14
MMBT6427
SOT-23 PNP Configuration
KST63
KST64
MMBTA63
BCV26
MMBTA64
SuperSOT NPN Configuration
MMBTA28
TO-226 NPN Configuration
TN6725A
2N7053
TO-92 NPN Configuration
KSP12
MPSA12
2N5306
KSP13
Products
V
CEO
100
100
11
30
45
60
80
80
30
30
30
30
30
30
40
30
30
30
30
30
80
50
20
20
25
30
–
–
(V)
V
CBO
100
140
100
100
60
30
60
80
90
80
30
30
30
30
40
30
40
30
30
30
40
30
80
60
20
20
25
30
(V)
V
EBO
12
10
10
10
12
12
10
10
10
10
10
10
12
10
10
10
10
10
12
12
12
10
10
12
10
5
5
5
(V)
Max (A)
0.8
1.5
1.2
0.8
0.8
0.8
1.5
1.2
0.3
0.3
1.2
1.2
1.2
1.2
0.5
0.5
1.2
1.2
1.2
0.8
1.2
1.5
1.2
1.2
0.5
I
–
–
–
C
10000
10000
20000
10000
20000
10000
20000
10000
20000
20000
20000
10000
20000
10000
20000
20000
10000
20000
20000
10000
5000
2000
2000
2000
1000
1000
7000
4000
Min
2-92
Discrete Power Products –
200000
20000
40000
20000
70000
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
10
10
10
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
1000
1000
1000
C
100
100
500
100
500
500
500
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
10
10
2
(mA)
Bipolar Transistors and JFETs
Max (V)
1.5
1.5
1.5
1.5
1.3
1.3
1.3
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.4
1.5
1
1
1
1
V
@I
CE (sat)
1000
1000
C
100
100
100
500
500
500
100
100
100
100
100
100
100
100
500
100
100
100
100
100
100
100
200
100
10
10
(mA) @I
0.01
0.01
B
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.1
0.1
0.1
0.1
0.1
0.5
0.1
0.1
0.1
0.1
0.1
50
50
50
1
2
(mA)
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