FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 208

• Manufacturer Part Number: FDR858P
• Description: MOSFET P-CH 30V 8A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR858P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Dc: 9940
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR858P; FDR858PTR

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Discrete
Discrete IGBT (II)
SG H 20 N 120 RUF D
(Continued)
L: Logic Level
LS: Low Saturation
UF: Ultrafast
RUF: Rugged Ultrafast
P: TO-220
R: D-PAK
S: TO-220F
U: I-PAK
H: TO-3P
W: D
F: TO-3PF
L: TO-264
M: SOT-223
D, DG3: Built-in FRD
Suffix
Voltage Rating (x10)
N: N-Channel
Current Rating
Package Type
Fairchild IGBT
2
-PAK
8-15
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