FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 99

• Manufacturer Part Number: FDR858P
• Description: MOSFET P-CH 30V 8A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR858P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Dc: 9940
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR858P; FDR858PTR

www.fairchildsemi.com
Small Signal Transistors – Digital Transistors
SOT-23 NPN Configuration
FJV3109R
FJV3110R
FJV3112R
FJV3101R
FJV3102R
FJV3103R
FJV3104R
FJV3105R
FJV3106R
FJV3107R
FJV3108R
FJV3113R
FJV3114R
FJV3115R
SOT-23 PNP Configuration
FJV3111R
FJV4109R
FJV4110R
FJV4111R
FJV4112R
FJV4101R
FJV4102R
FJV4103R
FJV4104R
FJV4105R
FJV4106R
FJV4107R
FJV4108R
FJV4113R
FJV4114R
SOT-323 NPN Configuration
FJX3009R
FJX3010R
FJX3011R
Products
V
(V)
40
40
40
50
50
50
50
50
50
50
50
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
CEO
V
(V)
40
40
40
50
50
50
50
50
50
50
50
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
CBO
V
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
EBO
5
5
5
5
5
5
5
5
5
5
5
Max (A)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
C
(KΩ)
4.7
4.7
4.7
2.2
4.7
2.2
4.7
4.7
4.7
2.2
4.7
4.7
R
10
47
10
22
47
10
22
47
22
10
22
47
10
22
47
10
22
47
10
22
1
(KΩ)
4.7
4.7
4.7
R
10
22
47
47
47
22
47
47
10
10
22
47
10
47
47
22
47
47
–
–
–
–
–
–
–
–
–
–
–
2
Min
100
100
100
100
100
100
100
100
100
100
100
20
30
56
68
30
68
68
56
68
68
33
20
30
56
68
30
68
68
56
68
68
2-94
Discrete Power Products –
Max
600
600
600
600
600
600
600
600
600
600
600
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
C
10
10
10
10
1
1
1
5
5
5
5
5
5
5
5
1
1
1
1
1
5
5
5
5
5
5
5
5
5
1
1
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(mA) @I
B
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10
1
1
1
1
1
1
1
1
1
1
(mA)