FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 204

• Manufacturer Part Number: FDR858P
• Description: MOSFET P-CH 30V 8A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR858P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Dc: 9940
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR858P; FDR858PTR

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Discrete
STEALTH
ISL 9
R
TM
15 60
(Continued)
Rectifier
G2
P2: TO-220 (2 Lead)
G2: TO-247 (2 Lead)
G3: TO-247 (3 Lead)
S3: TO-263 (D
D3: TO-251/252 (DPAK) (2 Lead)
i.e., (600, 1200)
R: Rectifier
K: Common Cathode
Package
Voltage Breakdown/10
Current Rating
Configuration
Discrete Power
Fairchild
2
PAK)
8-11
5A3: TO-247ST
IY3: TO-264
IN4: SOT-227
P3: TO-220 (3 Lead)
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