TS86101G2BCGL E2V, TS86101G2BCGL Datasheet - Page 6

• Manufacturer Part Number: TS86101G2BCGL
• Manufacturer: E2V

Specifications of TS86101G2BCGL

• Lead Free Status / RoHS Status: Not Compliant

Table 2-3.
6
Parameter
Single tone
Spurious free dynamic range in third Nyquist zone
assuming an Fs/4 bandwidth centered around 5 Fs/4,
with a sin x/x pre-compensation for a constant output
power of –12.3 dBm over the band of interest): see
page
Fs = 1.2 Gsps; Fout = Fs + 150 MHz = 1350 MHz
Fs = 1.2 Gsps; Fout = Fs + 450 MHz = 1650 MHz
SFDR sensitivity over temperature and power supplies range
Signal independent spur (clock-related spur)
Fs = 1.2 Gsps:
Fs/4 power level (first Nyquist zone)
Fs/2 Power level (first Nyquist zone)
Signal-to-noise ratio (DC to Nyquist)
Fs = 1.2 Gsps; Fout = 375 MHz (–15 dBFS)
Multi-tone inter-modulation:
Fs = 1.2 Gsps
Four tones at 100 MHz spacing (150 to 450 MHz)
(–12 dBFS)
Eight tones at 62.5 MHz spacing (80 to 517.5 MHz)
(–18 dBFS)
Broadband noise power ratio:
At –12 dBFS peak to rms optimum loading factor
Fs = 1.2 Gsps, 20 to 580 MHz broadband
pattern, 25 MHz
Notch centered around 250 MHz
DC Accuracy
Differential non-linearity
Differential non-linearity
Integral non-linearity
Integral non-linearity
DC gain
- Initial gain error
- DC gain dispersion
- DC gain sensitivity to power supplies
- DC gain drift over temperature
Mid-scale output voltage
12.
0992D–BDC–04/09
Electrical Operating Characteristics: V
(3)
(Continued)
(4)
(5)
(2)
Figure 3-6 on
:
CCD
= 5V, V
Symbol
IF SFDR
DNL+
DNL-
INL+
SNR
NPR
IMD
INL-
EEA
and V
Level
Test
4
4
4
4
4
4
4
4
4
4
1
1
1
4
5
EED
= –5V, LVDS Input Level, T
Min
36
65
39
59
58
63
65
47
–0.25
–0.25
–600
Typ
0.25
0.25
–80
–72
40
69
43
63
60
68
70
49
e2v semiconductors SAS 2009
TS86101G2B
±3.5%
±2.3%
±1.5%
Max
–400
J
±3
= 85°C
ppm/°C
dBFS
dBFS
dBFS
dBFS
dBFS
Unit
dBm
dBm
%FS
%FS
%FS
LSB
LSB
LSB
LSB
dBc
dBc
dB
dB
mV