TS86101G2BCGL E2V, TS86101G2BCGL Datasheet - Page 9

• Manufacturer Part Number: TS86101G2BCGL
• Manufacturer: E2V

Specifications of TS86101G2BCGL

• Lead Free Status / RoHS Status: Not Compliant

2.3
3. Typical Characteristics
Figure 3-1.
Notes:
e2v semiconductors SAS 2009
Explanation of Test Levels
1. SFDR performance (expressed in dBc) is optimum near –6 dBFS.
2. SFDR performance (expressed in dBFS) is quasi-constant for output levels below –6 dBFS. This means that the level of
3. SFDR is the ratio of the magnitude of the first (main) harmonic and the highest other harmonic measured over the frequency
4. In single-ended operation, 0 dBFS = full-scale = 1 Vpp = 0.5V peak over 50Ω = –6 dBV = 4 dBm. In differential mode,
5. The power level at the DAC’s output is given by both the digital sinusoidal input level (dBFS) and the theoretical sin X/X devi-
60
55
50
45
spurs remains quasi-unchanged when lowering the amplitude of the fundamental.
band DC to Fs/2.
0 dBFS = full-scale = 2 Vpp = 0.707 V peak over 100Ω = –3 dBV = 7 dBm.
ation, which is Fout-dependent. For example, considering the SFDR with a –10 dBFS digital sinusoidal input and Fout = 499
MHz, Fs = 1 Gsps, the differential output power level of the single tone at Fout = 499 MHz is –6.9 dBm (–10 dBFS = –3 dBm
and the theoretical deviation of sin X/X is –3.9 dB in Nyquist).
SFDR at Fs = 1.2 Gsps Against Output Level in Nyquist Conditions (Fout = 575 MHz)
Table 2-5.
Notes:
The device’s typical characteristics are the following, unless stated otherwise:
• T
• 100Ω differential output, 0 dBFS = 7 dBm
• Full-scale analog output voltage = 2 Vpp if (50Ω // 2pF) × 2 differentially-terminated
• SFDR up to Nyquist
J
Num
= 85°C, V
1
2
3
4
5
1. The level 1 and 2 tests are performed at 100 Msps (600 Msps for SFDR performance).
2. Only MIN and MAX values are guaranteed (typical values are issued from characterization results).
Output Level (dBFS)
Explanation of Test Levels
CCD
Characteristics
100% production tested at +25
100% production tested at +25
Sample tested only at specified temperatures
Parameter is guaranteed by design and characterization testing (thermal steady-state conditions at specified
temperature)
Parameter is a typical value only
= 5V, V
(1)
EEA
= –5V, V
EED
°
°
C
C, and sample tested at specified temperatures
= –5V
(1)
70
65
60
55
50
Output Level (dBFS)
(1)
TS86101G2B
0992D–BDC–04/09
9