PEB20256EV21GXP Infineon Technologies, PEB20256EV21GXP Datasheet - Page 100
PEB20256EV21GXP
Manufacturer Part Number
PEB20256EV21GXP
Description
Manufacturer
Infineon Technologies
Datasheet
1.PEB20256EV21GXP.pdf
(232 pages)
Specifications of PEB20256EV21GXP
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
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address is sent, the data stored in the memory at the selected address is shifted in on
the SPSI pin. The read operation is terminated by setting SPCS high (see Figure 5-3).
•
Figure 5-3
5.2.3
Prior to any attempt to write data to an external EEPROM, the write enable latch must
be set by issuing the WREN instruction. This is done by setting SPCS low and then
clocking out the WREN instruction. After all eight bits of the instruction are transmitted,
the SPCS will be brought high to set the write enable latch.
Once the write enable latch is set, the user may proceed by issuing a write instruction,
followed by the eight bit address and then the data to be written. In order that data will
actually be written to the EEPROM, the SPCS is set high after the least significant bit
(D0) of the data byte has been clocked in. Refer to Figure 5-4 for detailed illustrations
on the byte write sequence. While the write is in progress, the register bit SPI.START
may be read to check the status of the transaction. When a write cycle is completed, the
register bit SPI.START is reset.
•
Figure 5-4
Data Sheet
SPCLK
SPCLK
SPCS
SPSO
SPCS
SPSO
SPSI
SPSI
SPI Write Sequence
SPI Read Sequence
SPI Write Sequence
0
0
0
0
1
0
1
0
2
0
2
0
instruction
instruction
3
0
3
0
4
0
4
0
5
0
5
0
6
1
6
1
7
1
7
0
100
8
8
7
7
9
9
6
6
8 bit address
8 bit address
14 15 16 17 18 19 20 21 22 23
14 15 16 17 18 19 20 21 22 23
0
0
7
7
6
6
Interface Description
5
5
data out
data in
4
4
3
3
PEB 20256 E
PEF 20256 E
2
2
1
1
0
0
04.2001
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