AT32UC3A0128 Atmel Corporation, AT32UC3A0128 Datasheet - Page 415

• Manufacturer Part Number: AT32UC3A0128
• Manufacturer: Atmel Corporation

Specifications of AT32UC3A0128

• Flash (kbytes): 128 Kbytes
• Pin Count: 144
• Max. Operating Frequency: 66 MHz
• Cpu: 32-bit AVR
• # Of Touch Channels: 32
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 109
• Ext Interrupts: 109
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device + OTG
• Spi: 6
• Twi (i2c): 1
• Uart: 4
• Ssc: 1
• Ethernet: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 384
• Resistive Touch Screen: No
• Dac Channels: 2
• Dac Resolution (bits): 16
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 32
• Self Program Memory: YES
• External Bus Interface: 1
• Dram Memory: sdram
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 3.0-3.6 or (1.65-1.95+3.0-3.6)
• Operating Voltage (vcc): 3.0-3.6 or (1.65-1.95+3.0-3.6)
• Fpu: No
• Mpu / Mmu: Yes / No
• Timers: 10
• Output Compare Channels: 16
• Input Capture Channels: 6
• Pwm Channels: 13
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

32058K AVR32-01/12
28.6
28.6.1
Product Dependencies
SDRAM Device Initialization
The initialization sequence is generated by software. The SDRAM devices are initialized by the
following sequence:
1. SDRAM features must be set in the configuration register: asynchronous timings (TRC,
2. For mobile SDRAM, temperature-compensated self refresh (TCSR), drive strength (DS)
3. The SDRAM memory type must be set in the Memory Device Register.
4. An No Operation (NOP)command must be issued to the SDRAM devices to start the
5. A minimum pause of 200 µs is provided to precede any signal toggle.
6. An All Banks Precharge command must be issued to the SDRAM devices. The applica-
7. Eight auto-refresh (CBR) cycles are provided. The application must set the Mode to 4 in
8. A Mode Register set (MRS) cycle must be issued to program the parameters of the
9. For mobile SDRAM initialization, an Extended Mode Register set (EMRS) cycle must be
10. The application must go into Normal Mode, setting Mode to 0 in the Mode Register and
11. Write the refresh rate into the count field in the SDRAMC Refresh Timer register.
After initialization, the SDRAM devices are fully functional.
TRAS, ...), number of column, rows, CAS latency, and the data bus width.
and partial array self refresh (PASR) must be set in the Low Power Register.
SDRAM clock. The application must set Mode to 1 in the and perform a write access to
any SDRAM address.
tion must set Mode to 2 in the Mode Register and perform a write access to any SDRAM
address.
the Mode Register and performs a write access to any SDRAM location eight times.
SDRAM devices, in particular CAS latency and burst length. The application must set
Mode to 3 in the Mode Register and perform a write access to the SDRAM. The write
address must be chosen so that BA[1:0] are set to 0. For example, with a 16-bit 128 MB
SDRAM (12 rows, 9 columns, 4 banks) bank address, the SDRAM write access should
be done at the address 0x20000000.
issued to program the SDRAM parameters (TCSR, PASR, DS). The application must set
Mode to 5 in the Mode Register and perform a write access to the SDRAM. The write
address must be chosen so that BA[1] or BA[0] are set to 1. For example, with a 16-bit
128 MB SDRAM, (12 rows, 9 columns, 4 banks) bank address the SDRAM write access
should be done at the address 0x20800000 or 0x20400000.
performing a write access at any location in the SDRAM.
(Refresh rate = delay between refresh cycles). The SDRAM device requires a refresh
every 15.625 us or 7.81 us. With a 100 MHz frequency, the Refresh Timer Counter Reg-
ister must be set with the value 1562 (15.625 µs x 100 MHz) or 781 (7.81 µs x 100 MHz).
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