MT57V1MH18A Micron Semiconductor Products, Inc., MT57V1MH18A Datasheet - Page 12

• Manufacturer Part Number: MT57V1MH18A
• Description: 18Mb DDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 10: I
Notes appear following parameter tables on page 14; 0°C £ T
Table 11: Capacitance
Note 13; notes appear following parameter tables on page 14
Table 12: Thermal Resistance
Note 13; notes appear following parameter tables on page 14
18Mb: 2.5V V
MT57V1MH18A_16_F.fm – Rev. F, Pub. 3/03
DESCRIPTION
DESCRIPTION
DESCRIPTION
Operating Supply
Current: DDR
Standby Supply
Current: NOP
Stop Clock Current
Output Supply
Current: DDR
(Information only)
Address/Control Input Capacitance
Output Capacitance (D,Q)
Clock Capacitance
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
DD
, HSTL, Pipelined DDRb2 SRAM
DD
Operating Conditions and Maximum Limits
All inputs £ V
address and data bits toggling on
t
ratio for READs to WRITEs; 50%
KHKH (MIN); Outputs open; x:1
Cycle time = 0; Input Static
All addresses/data static
t
KHKH =
Device in NOP state;
each clock cycle
Soldered on a 4.25 x 1.125 inch, 4-layer,
CONDITIONS
IL
C
or
L
t
= 15pF
KHKH (MIN);
³
V
T
printed circuit board
A
IH
= 25ºC; f = 1 MHz
; Cycle time
CONDITIONS
CONDITIONS
2.5V V
³
12
A
DD
£ +70°C; V
SYM
I
I
X
X
X
X
DD
x18
x36
I
SB
I
DD
18
36
18
36
SB
, HSTL, PIPELINED DDRb2 SRAM
1
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
TYP
TBD
TBD
TBD
TBD
SYMBOL
= 2.5V ±0.1V unless otherwise noted
C
C
SYMBOL
C
CK
O
I
q
q
q
JA
JC
JB
300
400
170
180
75
41
81
-5
1 MEG x 18, 512 x 36
MAX
TYP
260
350
150
160
4.5
5.5
75
34
68
-6
6
19.4
TYP
1.0
9.6
-7.5
225
275
125
135
75
28
55
MAX
UNITS
5.5
6.5
ºC/W
ºC/W
7
ºC/W
UNITS
©2003 Micron Technology Inc.
mA
mA
mA
mA
NOTES
UNITS
NOTES
10, 11
pF
pF
pF
9, 10
14
15
10
12