MT57V1MH18A Micron Semiconductor Products, Inc., MT57V1MH18A Datasheet - Page 21

• Manufacturer Part Number: MT57V1MH18A
• Description: 18Mb DDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

TAP AC Test Conditions
Table 15: TAP DC Electrical Characteristics and Operating Conditions
Note 2; 0ºC £ T
NOTE:
18Mb: 2.5V V
MT57V1MH18A_16_F.fm – Rev. F, Pub. 3/03
1. All voltages referenced to V
2. This table defines DC values for TAP control and data balls only. The DQ SRAM balls used in the JTAG operation will
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
Input pulse levels . . . . . . . . . . . . . . . . . . . . . . . . . .V
Input rise and fall times . . . . . . . . . . . . . . . . . . . . . . 1ns
Input timing reference levels . . . . . . . . . . . . . . 1.25V
Output reference levels . . . . . . . . . . . . . . . . . . . . 1.25V
Test load termination supply voltage . . . . . . . . 1.25V
have the same values as defined in Table 8, “DC Electrical Characteristics and Operating Conditions,” on page 11.
DD
, HSTL, Pipelined DDRb2 SRAM
A
£ +70ºC; V
DD
= 2.5V ±0.1V unless otherwise noted
SS
(GND).
Output(s) disabled,
0V £ V
0V £ V
|I
CONDITIONS
I
|I
OHC
OLC
I
OHT
OLT
| = 100µA
= 100µA
IN
| = 2mA
= 2mA
IN
£ V
SS
£ V
2.5V V
to 2.5V
DD
DD
Q
21
DD
SYMBOL
V
V
V
V
, HSTL, PIPELINED DDRb2 SRAM
V
IL
V
IL
OH1
OH2
OL1
OL2
IH
IL
O
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TAP AC Output Load Equivalent
TDO
MIN
-0.3
-5.0
-5.0
1.7
2.1
1.7
1 MEG x 18, 512 x 36
Figure 10:
Z = 50Ω
O
V
DD
MAX
0.7
5.0
5.0
0.2
0.7
+ 0.3
UNITS
1.25V
µA
µA
V
V
V
V
V
V
©2003 Micron Technology Inc.
20pF
50Ω
NOTES
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
2
2