MT57V1MH18A Micron Semiconductor Products, Inc., MT57V1MH18A Datasheet - Page 15

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MT57V1MH18A

Manufacturer Part Number
MT57V1MH18A
Description
18Mb DDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet

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AC Test Conditions
18Mb: 2.5V V
MT57V1MH18A_16_F.fm – Rev. F, Pub. 3/03
Input pulse levels . . . . . . . . . . . . . . . . . . 0.25V to 1.25V
Input rise and fall times . . . . . . . . . . . . . . . . . . . . 0.7ns
Input timing reference levels . . . . . . . . . . . . . . . . 0.75V
Output reference levels . . . . . . . . . . . . . . . . . . VDDQ/2
ZQ for 50 W impedance . . . . . . . . . . . . . . . . . . . . . 250 W
Output load . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 5
DD
, HSTL, Pipelined DDRb2 SRAM
2.5V V
15
DD
, HSTL, PIPELINED DDRb2 SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SRAM
Output Load Equivalent
V
ZQ
REF
1 MEG x 18, 512 x 36
Figure 5:
0.75V
250Ω
Z = 50Ω
O
©2003 Micron Technology Inc.
V
DD
Q/2
50Ω

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