at52sq1283j ATMEL Corporation, at52sq1283j Datasheet
at52sq1283j
Manufacturer Part Number
at52sq1283j
Description
At52sq1283j 128-mbit Flash + 32-mbit Psram Stack Memory
Manufacturer
ATMEL Corporation
Datasheet
1.AT52SQ1283J.pdf
(51 pages)
Module Features
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128-Mbit Flash Features
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32-Mbit Asynchronous/Page PSRAM Features
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Stack Module Memory Contents
Device
AT52SQ1283J
128-Mbit Burst/Page Flash + 32-Mbit PSRAM
Single 88-ball (8 mm x 10 mm x 1.2 mm) CBGA Package
1.65V to 1.95V V
2.7V to 3.1V V
8M x 16 Organization
High Performance
Sector Erase Architecture
Typical Sector Erase Time: 32K Word Sectors – 800 ms; 4K Word Sectors – 200 ms
Thirty-two Plane Organization, Permitting Concurrent Read in Any of the Thirty-one
Planes not Being Programmed/Erased
Suspend/Resume Feature for Erase and Program
Low-power Operation
VPP Pin for Write Protection and Accelerated Program Operations
RESET Input for Device Initialization
Two Protection Registers (128 Bits + 2,048 Bits)
Common Flash Interface (CFI)
Top and Bottom Boot Sectors
1.65V to 1.95V Operating Voltage
2.7V to 3.1V I/O
2M x 16 Organization
70 ns Random Access Time
25 ns Page Read Cycle Time
2.7V to 3.1V PV
<10 µA Deep Standby Power
– Random Access Time – 70 ns, 85 ns
– Page Mode Read Time – 30 ns
– Synchronous Burst Frequency – 66 MHz
– Configurable Burst Operation
– Sixteen 4K Word Sectors with Individual Write Lockout
– Two Hundred Fifty-four 32K Word Main Sectors with Individual Write Lockout
– Supports Reading and Programming Data from Any Sector by Suspending Erase
– Supports Reading Any Word by Suspending Programming of Any Other Word
– 30 mA Active
– 20 µA Standby
of a Different Sector
CCQ
CC
CC
for Flash + PSRAM
128M Flash + 32M PSRAM
Memory Combination
128-Mbit Flash +
32-Mbit PSRAM
Stack Memory
AT52SQ1283J
3525B–STKD–3/05
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