k4b2g0446e Samsung Semiconductor, Inc., k4b2g0446e Datasheet - Page 20

• Manufacturer Part Number: k4b2g0446e
• Description: Ddp 2gb E-die Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G0446E
K4B2G0846E
9.6 Overshoot/Undershoot Specification
9.6.1 Address and Control Overshoot and Undershoot specifications
[ Table 20 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2, CS, RAS, CAS, WE, CKE, ODT)
9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot specifications
[ Table 21 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask (DQ, DQS, DQS, DM, CK, CK)
Parameter
Maximum peak amplitude allowed for overshoot area (See Figure 9)
Maximum peak amplitude allowed for undershoot area (See Figure 9)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area (See Figure 11)
Maximum peak amplitude allowed for undershoot area (See Figure 11)
Maximum overshoot area above V
Maximum undershoot area below V
Volts
Volts
(V)
(V)
V
V
V
V
DD
SS
DDQ
SSQ
DD
DDQ
Figure 10. Clock, Data, Strobe and Mask Overshoot and Undershoot definition
SS
SSQ
(See Figure 9)
(See Figure 9)
(See Figure 11)
(See Figure 11)
Figure 9. Address and Control Overshoot and Undershoot definition
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
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Time (ns)
Time (ns)
DDR3-800
DDR3-800
0.25V-ns
0.25V-ns
0.67V-ns
0.67V-ns
0.4V
0.4V
0.4V
0.4V
DDR3-1066
DDR3-1066
0.19V-ns
0.19V-ns
0.5V-ns
0.5V-ns
0.4V
0.4V
0.4V
0.4V
Undershoot Area
Undershoot Area
Overshoot Area
Overshoot Area
Specification
Specification
DDP 2Gb DDR3 SDRAM
DDR3-1333
DDR3-1333
0.15V-ns
0.15V-ns
0.4V-ns
0.4V-ns
0.4V
0.4V
0.4V
0.4V
Rev. 1.0 March 2009
DDR3-1600
DDR3-1600
0.33V-ns
0.33V-ns
0.13V-ns
0.13V-ns
0.4V
0.4V
0.4V
0.4V
V-ns
V-ns
Unit
V-ns
V-ns
Unit
V
V
V
V