k4b2g0446e Samsung Semiconductor, Inc., k4b2g0446e Datasheet - Page 31

• Manufacturer Part Number: k4b2g0446e
• Description: Ddp 2gb E-die Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G0446E
K4B2G0846E
Figure 20 :Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ Measurement.
[Note: DIMM level Output test load condition may be different from above ]
Figure 19 : Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
Application specific
Channel IO Power
memory channel
RESET
CK/CK
CKE
CS
RAS, CAS, WE
A, BA
ODT
ZQ
environment
Channel
IO Power
Simulation
Number
V
V
DD
SS
I
DD
Correction
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TDQS, TDQS
V
V
DQS, DQS
DDQ
SSQ
DQ, DM,
I
DDQ
(optional)
Simulation
IDDQ
R
TT
= 25 Ohm
DDP 2Gb DDR3 SDRAM
IDDQ
Test Load
V
DDQ
/2
Correlation
Measurement
Rev. 1.0 March 2009
IDDQ