k4b2g0446e Samsung Semiconductor, Inc., k4b2g0446e Datasheet - Page 51

• Manufacturer Part Number: k4b2g0446e
• Description: Ddp 2gb E-die Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G0446E
K4B2G0846E
Figure 21 - Illustration of nominal slew rate and tVAC for setup time tDS (for DQ with respect to strobe) and tIS
Note :Clock and Strobe are drawn on a different time scale.
(for ADD/CMD with respect to clock).
V
V
V
V
Setup Slew Rate
V
V
IL
IL
Falling Signal
REF
DDQ
IH
IH
(DC) max
(AC) max
(DC) min
(AC) min
(DC)
DQS
DQS
CK
CK
V
SS
V
region
REF
=
Delta TF
to ac
V
REF
(DC) - V
Delta TF
nominal slew
tDS
tIS
IL
rate
tVAC
(AC)max
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tDH
tIH
Setup Slew Rate
Rising Signal
Delta TR
nominal
slew rate
tDS
tIS
tVAC
=
V
DDP 2Gb DDR3 SDRAM
IH
(AC)min - V
tDH
tIH
V
Delta TR
REF
region
to ac
REF
(DC)
Rev. 1.0 March 2009