k4b2g0446e Samsung Semiconductor, Inc., k4b2g0446e Datasheet - Page 4

• Manufacturer Part Number: k4b2g0446e
• Description: Ddp 2gb E-die Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G0446E
K4B2G0846E
10.0 IDD Specification Parameters and Test Conditions ............................................................. 28
11.0 DDP 2Gb DDR3 SDRAM E-die IDD Spec Table ..................................................................... 37
12.0 Input/Output Capacitance ....................................................................................................... 38
13.0 Electrical Characteristics and AC timing for DDR3-800 to DDR3-1600 .............................. 39
14.0 Timing Parameters by Speed Grade ...................................................................................... 44
9.9 ODT Timing Definitions
10.1 IDD Measurement Conditions
10.2 IDD Specifications definition
13.1 Clock specification
13.2 Refresh Parameters by Device Density
13.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
14.1 Jitter Notes
14.2 Timing Parameter Notes
14.3 Address / Command Setup, Hold and Derating:
14.4 Data Setup, Hold and Slew Rate Derating:
9.9.1 Test Load for ODT Timings
9.9.2 ODT Timing Definition
13.1.1 Definition for tCK (avg)
13.1.2 Definition for tCK (abs)
13.1.3 Definition for tCH(avg) and tCL(avg)
13.1.4 Definition for note for tJIT(per), tJIT(per,Ick)
13.1.5 Definition for note for tJIT(cc), tJIT(cc,Ick)
13.1.6 Definition for tERR(nper)
13.3.1 Speed Bin Table Notes
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DDP 2Gb DDR3 SDRAM
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Rev. 1.0 March 2009