k4b2g0446e Samsung Semiconductor, Inc., k4b2g0446e Datasheet - Page 42

• Manufacturer Part Number: k4b2g0446e
• Description: Ddp 2gb E-die Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G0446E
K4B2G0846E
[ Table 46 ] DDR3-1600 Speed Bins
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CL = 11
Supported CL Settings
Supported CWL Settings
Parameter
CL-nRCD-nRP
Speed
CWL = 5,6,7
CWL = 7, 8
CWL = 5,6
CWL = 5,6
CWL = 5
CWL = 6
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 7
CWL = 8
CWL = 7
CWL = 8
CWL = 8
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
Symbol
tRCD
tRAS
tRC
tAA
tRP
Page 42 of 59
(13.125)
(13.125)
(13.125)
(48.125)
13.75
13.75
13.75
48.75
1.875
1.875
1.25
min
2.5
1.5
1.5
35
5,9
5,9
5,9
5,9
(Optional) Note 9,10
(Optional) Note 9,10
(Optional) Note 5,9
6,7,8,9,10,11
DDR3-1600
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
11-11-11
5,6,7,8
TBD
DDP 2Gb DDR3 SDRAM
9*tREFI
<1.875
<1.875
max
<2.5
<2.5
<1.5
3.3
20
-
-
-
Rev. 1.0 March 2009
Units
nCK
nCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2,3,4,8
1,2,3,4,8
1,2,3,4,8
1,2,3,4,8
1,2,3,4,8
1,2,3,8
1,2,3,8
1,2,3,4
1,2,3,4
1,2,3,8
1,2,3,4
1,2,3,5
Note
4
4
4
4
4
4
4