k4b2g0446e Samsung Semiconductor, Inc., k4b2g0446e Datasheet - Page 35

• Manufacturer Part Number: k4b2g0446e
• Description: Ddp 2gb E-die Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G0446E
K4B2G0846E
[ Table 37 ] IDD4W Measurement - Loop Pattern
Note :
1. DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL.
2. Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.
[ Table 38 ] IDD5B Measurement - Loop Pattern
Note :
1. DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
2. DQ signals are MID-LEVEL.
0
1
2
3
4
5
6
7
0
1
2
33...nRFC - 1
13...16
17...20
21...24
25...28
29...32
16-23
24-31
32-39
40-47
48-55
56-63
9...12
8-15
5...8
2,3
6,7
1,2
3,4
0
1
4
5
0
repeat Sub-Loop 0, but BA[2:0] = 1
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 0, but BA[2:0] = 3
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 0, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 0, but BA[2:0] = 7
repeat cycles 1...4, but BA[2:0] = 1
repeat cycles 1...4, but BA[2:0] = 2
repeat cycles 1...4, but BA[2:0] = 3
repeat cycles 1...4, but BA[2:0] = 4
repeat cycles 1...4, but BA[2:0] = 5
repeat cycles 1...4, but BA[2:0] = 6
repeat cycles 1...4, but BA[2:0] = 7
repeat Sub-Loop 1, until nRFC - 1. Truncate, if necessary.
REF
WR
D,D
WR
D,D
D,D
D
D
D
0
1
1
0
1
1
0
1
1
1
1
1
0
1
1
0
1
0
0
1
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0
0
1
0
0
1
0
0
1
0
0
1
0
0
1
1
0
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
00
00
00
00
00
00
00
00
00
DDP 2Gb DDR3 SDRAM
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
F
F
0
0
0
0
0
Rev. 1.0 March 2009
0
0
0
0
0
0
0
0
0
00000000
00110011
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