k4b2g0446e Samsung Semiconductor, Inc., k4b2g0446e Datasheet - Page 27

• Manufacturer Part Number: k4b2g0446e
• Description: Ddp 2gb E-die Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G0446E
K4B2G0846E
Figure 17. Definition of tAOFPD
Figure 18. Definition of tADC
CK
CK
CK
CK
DQ, DM
DQS , DQS
TDQS , TDQS
DQ, DM
DQS , DQS
TDQS , TDQS
Begin point : Rising edge of CK - CK
with ODT being first registered low
Begin point : Rising edge of CK - CK
defined by the end point of ODTLcnw
V
V
RTT_Nom
RTT_Nom
End point
Extrapolated point
at V
V
SW2
RTT_Nom
V
SW1
t
End point Extrapolated point at V
t
End point Extrapolated point at V
AOFPD
ADC
T
T
SW2
SW21
T
SW1
T
SW11
V
Begin point : Rising edge of CK - CK defined by
the end point of ODTLcwn4 or ODTLcwn8
SW1
Page 27 of 59
V
SW2
V
RTT_Wr
RTT_Nom
RTT_Nom
End point Extrapolated point at V
t
ADC
T
V
SW12
SSQ
V
T
DDP 2Gb DDR3 SDRAM
SW22
TT
V
RTT_Nom
Rev. 1.0 March 2009
RTT_Wr
V
SSQ
V
TT