k4b2g0446e Samsung Semiconductor, Inc., k4b2g0446e Datasheet - Page 58

• Manufacturer Part Number: k4b2g0446e
• Description: Ddp 2gb E-die Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G0446E
K4B2G0846E
Figure 27 - Illustration of tangent line for setup time tDS (for DQ with respect to strobe) and tIS
Note :Clock and Strobe are drawn on a different time scale.
(for ADD/CMD with respect to clock)
V
V
V
V
V
V
REF
IL
IL
DDQ
IH
IH
(DC) max
(AC) max
(AC) min
(DC) min
Setup Slew Rate
(DC)
Falling Signal
DQS
DQS
CK
CK
V
nominal
SS
line
V
region
REF
=
Delta TF
tangent line[V
to ac
Delta TF
tDS
tIS
tangent
REF
line
Page 58 of 59
(DC) - V
Setup Slew Rate
tDH
tIH
Rising Signal
IL
(AC)max]
nominal
line
Delta TR
=
tangent line[V
tDS
tIS
tVAC
tangent
line
Delta TR
DDP 2Gb DDR3 SDRAM
IH
tDH
tIH
(AC)min - V
V
REF
region
to ac
REF
(DC)]
Rev. 1.0 March 2009