ST10F272M-4Q3 STMICROELECTRONICS [STMicroelectronics], ST10F272M-4Q3 Datasheet - Page 123

• Manufacturer Part Number: ST10F272M-4Q3
• Description: 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

ST10F272M
24
24.1
Table 52.
Note:
Symbol
V
V
V
ESD
V
I
AGND
T
AREF
V
STBY
I
TOV
OV
DD
ST
IO
Voltage on V
Voltage on V
Voltage on V
Voltage on V
Voltage on any pin with respect to ground (V
Input current on any pin during overload condition
Absolute sum of all input currents during overload condition
Storage temperature
ESD Susceptibility (Human Body Model)
Electrical characteristics
Absolute maximum ratings
Absolute maximum ratings
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability. During overload conditions (V
voltage on pins with respect to ground (V
Absolute Maximum Ratings.
During Power-on and Power-off transients (including Standby entering/exiting phases), the
relationships between voltages applied to the device and the main V
respected. In particular, power-on and power-off of V
transient, in order to avoid undesired current injection through the on-chip protection diodes.
AREF
AGND
DD
STBY
pins with respect to ground (V
pin with respect to ground (V
pins with respect to ground (V
pins with respect to ground (V
Parameter
SS
SS
SS
)
SS
SS
)
SS
) must not exceed the values defined by the
)
)
)
AREF
must be coherent with V
-0.5 to V
Electrical characteristics
IN
-0.5 to +6.5
-0.5 to +6.5
-65 to +150
-0.3 to V
Values
> V
DD
| 75 |
2000
± 10
V
SS
DD
DD
must always be
DD
+ 0.5
or V
IN
< V
DD
SS
123/176
Unit
mA
mA
°C
) the
V
V
V
V
V
V