ST10F272M-4Q3 STMICROELECTRONICS [STMicroelectronics], ST10F272M-4Q3 Datasheet - Page 148

• Manufacturer Part Number: ST10F272M-4Q3
• Description: 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
24.8.11
148/176
Main oscillator specifications
V
Table 64.
1. Not 100% tested, guaranteed by design characterization
Figure 47. Crystal oscillator and resonator connection diagram
Table 65.
The given values of C
printed circuit board: the negative resistance values are calculated assuming additional 5pF
to the values in the table. The crystal shunt capacitance (C
between XTAL1 and XTAL2 pins is globally assumed equal to 10pF.
The external resistance between XTAL1 and XTAL2 is not necessary, since already present
on the silicon.
4 MHz
8 MHz
Symbol
DD
t
V
STUP
V
g
OSC
AV
m
= 5V ± 10%, V
545 Ω
240 Ω
Oscillator
Transconductance
Oscillation Amplitude
Oscillation Voltage level
Oscillator Start-up Time
Min
Main oscillator characteristics
Main oscillator negative resistance (module)
C
Parameter
A
1035 Ω
450 Ω
SS
= 15pF
Typ
ST10F272M
C
A
= 0V, T
A
Crystal
do not include the stray capacitance of the package and of the
Max
(1)
A
–
–
= -40 to +125°C
(1)
(1)
Peak to Peak
Sine wave middle
Stable V
Stable V
C
A
550 Ω
170 Ω
Min
Conditions
DD
DD
C
- Crystal
- Resonator
A
1050 Ω
350 Ω
Typ
= 25pF
Max
–
–
0
ST10F272M
) and the package capacitance
Resonator
Min
1.4
–
–
–
–
430 Ω
120 Ω
Min
Value
Typ
2.6
1.5
0.8
6
1
C
A
850 Ω
250 Ω
Typ
= 35pF
Max
4.2
10
–
–
2
ST10F272M
mA/V
Unit
Max
ms
ms
V
V
–
–