PF38F5070M0Q0B0 NUMONYX [Numonyx B.V], PF38F5070M0Q0B0 Datasheet - Page 68

• Manufacturer Part Number: PF38F5070M0Q0B0
• Manufacturer: NUMONYX [Numonyx B.V]

7.4
Table 24: Program-Erase Characteristics
Datasheet
68
Conventional Word Programming
W200
Buffered Programming
W200
W250
Buffered Enhanced Factory Programming
W451
W452
Erasing and Suspending
W501
W600
W601
Blank Check
W702
Notes:
1.
2.
3.
4.
Nbr.
Typical values measured at T
Sampled, but not 100% tested.
First and subsequent words refer to first word and subsequent words in Control Mode programming region.
Averaged over entire device.
BEFP not validated at V
t
t
t
t
t
Setup
t
t
t
t
Symbol
PROG/W
PROG/W
PROG/PB
BEFP/W
BEFP/
ERS/MAB
SUSP/P
SUSP/E
BC/MB
Program and Erase Characteristics
The M18 device includes specifications for different lithographies, densities, and
frequencies. For additional information on combinations, see
Litho/Density/Frequency Combinations” on page 10
Description.
Program
Time
Program
Time
Program
Time
Erase
Time
Suspen
d
Latency
Blank
Check
Parameter
Single word (first
word)
Single word
(subsequent word)
Single word
One Buffer (512
words)
Single word
Buffered EFP Setup
128-Kword Main
Array Block
Program suspend
Erase suspend
Main array block
PPL
.
C
= +25 °C and nominal voltages. Performance numbers are valid for all speed versions.
Litho (nm)
90
65
90
65
—
—
—
—
—
—
—
—
128, 256, 512,
128, 256, 512
256, 512
256, 512
Density
(Mbit)
1024
Numonyx™ StrataFlash
—
—
—
—
—
—
—
—
V
PPL
/V
PPH
in the
Min
—
—
—
—
—
—
—
—
—
5
Section 2.0, “Functional
Table 4, “M18 Product
2.15
1.02
Typ
115
250
4.2
2.0
0.9
3.2
50
20
20
—
®
Cellular Memory (M18)
Max
2.05
230
230
500
4.3
30
30
—
—
—
4
Unit
ms
ms
µs
µs
µs
µs
s
309823-10
April 2008
Notes
1,3,4
1,2
1
1
1
1
1
1