PF38F5070M0Q0B0 NUMONYX [Numonyx B.V], PF38F5070M0Q0B0 Datasheet - Page 79
PF38F5070M0Q0B0
Manufacturer Part Number
PF38F5070M0Q0B0
Description
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
1.PF38F5070M0Q0B0.pdf
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Numonyx™ StrataFlash
Figure 46: Latency Count Period
Notes:
1.
2.
Table 32: CLK Frequencies for LC Settings
9.3
April 2008
309823-10
3
4
5
6
7
8
9
10
11
12
13
Address latched on valid clock edge with ADV# low and LC count begins.
Address latched on ADV# rising edge. LC count begins on subsequent valid CLK edge.
ADV# (1)
ADV# (2)
DQ[15:0]
A[Max:0]
CLK
CE#
OE#
Enhanced Configuration Register
The Enhanced Configuration Register (ECR) is a volatile 16-bit, read/write register used
to select Deep Power Down (DPD) operation and to modify the output-driver strength
of the flash device. All Enhanced Configuration Register bits are set and cleared using
the Program Enhanced Configuration Register command. Upon power-up or exit from
reset, the Enhanced Configuration Register defaults to 0004h.
To read the value of the ECR, issue the Read Device Information command to the
desired partition. Subsequent reads from the <partition base address> + 06h returns
ECR[15:0].
Latency Count Setting
®
Cellular Memory (M18)
ADV#-Latch (2)
CLK Latch (1)
V
CCQ
= 1.7 V to 2.0 V
Latency Count
Latency Count
≤ 32.6 MHz
≤ 43.5 MHz
≤ 54.3 MHz
≤ 65.2 MHz
≤ 76.1 MHz
≤ 87 MHz
≤ 97.8 MHz
≤ 108.7 MHz
≤ 119.6 MHz
≤ 130.4 MHz
≤ 133.3 MHz
Frequency Supported (MHz)
tCHQV
Datasheet
79
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