MT48H16M16LF MICRON [Micron Technology], MT48H16M16LF Datasheet - Page 24

• Manufacturer Part Number: MT48H16M16LF
• Description: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
• Manufacturer: MICRON [Micron Technology]

Figure 10:
READs
Figure 11:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
Example: Meeting
READ Command
COMMAND
READ bursts are initiated with a READ command, as shown in Figure 11.
The starting column and bank addresses are provided with the READ command, and
auto precharge is either enabled or disabled for that burst access. If auto precharge is
enabled, the row being accessed is precharged at the completion of the burst. For the
generic READ commands used in the following illustrations, auto precharge is disabled.
During READ bursts, the valid data-out element from the starting column address will
be available following the CL after the READ command. Each subsequent data-out
element will be valid by the next positive clock edge. Figure 7 on page 16 shows general
timing for each possible CL setting.
BA0, BA1
Upon completion of a burst, assuming no other commands have been initiated, the DQs
will go High-Z.
A9, A11
A0–A8
CAS#
RAS#
WE#
A10
CKE
CLK
CS#
CLK
t
RCD (MIN) When 2 <
HIGH
ACTIVE
T0
t CK
DISABLE AUTO PRECHARGE
ENABLE AUTO PRECHARGE
COLUMN
ADDRESS
ADDRESS
BANK
t
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
NOP
RCD (MIN)
T1
24
DON’T CARE
t CK
t
RCD (MIN)/
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2
t CK
t
CK < 3
READ or
WRITE
DON’T CARE
T3
©2006 Micron Technology, Inc. All rights reserved.
Operations