MT48H16M16LF MICRON [Micron Technology], MT48H16M16LF Datasheet - Page 45

• Manufacturer Part Number: MT48H16M16LF
• Description: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
• Manufacturer: MICRON [Micron Technology]

Electrical Specifications
Absolute Maximum Ratings
Table 9:
Table 10:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
Voltage/Temperature
Parameter/Condition
Voltage on V
Voltage on inputs, NC or I/O balls relative to V
Storage temperature plastic
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output high voltage: All inputs: Iout = –4mA
Output low voltage: All inputs: Iout = 4mA
Input leakage current:
Any input 0V ≤ V
Operating temperature
T
T
A
A
(commercial)
(industrial)
DD
Absolute Maximum Ratings
DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 51 and 52; V
/V
IN
DD
≤ V
Q supply relative to V
DD
(All other balls not under test = 0V)
Stresses greater than those listed in Table 9 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
SS
(1.8V)
SS
(1.8V)
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
45
DD
/V
Symbol
DD
V
V
V
V
V
Q = 1.7–1.95V
DD
V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
OH
I
OL
IH
IL
I
Q
0.8 × V
0.9 × V
Min
–0.3
–1.0
+70
+85
1.7
1.7
–
DD
DD
Q
Q V
Electrical Specifications
Min
–0.3
–0.3
DD
–55
Max
+0.3
1.95
1.95
Q + 0.3
0.2
1.0
©2006 Micron Technology, Inc. All rights reserved.
°C
–
+150
Max
+2.7
+2.7
Units
µA
V
V
V
V
V
V
Units
Notes
V
22
22