MT48H16M16LF MICRON [Micron Technology], MT48H16M16LF Datasheet - Page 44

• Manufacturer Part Number: MT48H16M16LF
• Description: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
• Manufacturer: MICRON [Micron Technology]

PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
10. Burst in bank n continues as initiated.
11. For a WRITE without auto precharge interrupted by a READ (with or without auto pre-
12. For a WRITE without auto precharge interrupted by a WRITE (with or without auto pre-
13. Concurrent auto precharge: Bank n will initiate the auto precharge command when its
14. For a READ with auto precharge interrupted by a READ (with or without auto precharge),
15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge),
16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge),
17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge),
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs to bank m listed in the Command (Action) column include READs or
8. For a READ without auto precharge interrupted by a READ (with or without auto pre-
9. For a READ without auto precharge interrupted by a WRITE (with or without auto pre-
represented by the current state only.
WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled.
charge), the READ to bank m will interrupt the READ on bank n, CL later (see Figure 11 on
page 24).
charge), the WRITE to bank m will interrupt the READ on bank n when registered (see
Figure 12 on page 25 and Figure 13 on page 26). DQM should be used one clock prior to the
WRITE command to prevent bus contention.
charge), the READ to bank m will interrupt the WRITE on bank n when registered (see
Figure 20 on page 31), with the data-out appearing CL later. The last valid WRITE to bank n
will be data-in registered one clock prior to the READ to bank m.
charge), the WRITE to bank will interrupt the WRITE on bank n when registered (see
Figure 18 on page 30). The last valid WRITE to bank n will be data-in registered one clock
prior to the READ to bank m.
burst has been interrupted by bank m burst.
the READ to bank m will interrupt the READ on bank n, CL later. The PRECHARGE to bank n
will begin when the READ to bank m is registered.
the WRITE to bank m will interrupt the READ on bank n when registered. DQM should be
used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE
to bank n will begin when the WRITE to bank m is registered.
the READ to bank m will interrupt the WRITE on bank n when registered, with the data-out
appearing CL later. The PRECHARGE to bank n will begin after
begins when the READ to bank m is registered. The last valid WRITE bank n will be data-in
registered one clock prior to the READ to bank m.
the WRITE to bank m interrupt the WRITE on bank n when registered. The PRECHARGE to
bank n will begin after
tered. The last valid WRITE to bank n will be data registered one clock to the WRITE to
bank m.
t
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
WR is met, where
44
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WR begins when the WRITE to bank m is regis-
t
WR is met, where
©2006 Micron Technology, Inc. All rights reserved.
Truth Tables
t
WR