MT48H16M16LF MICRON [Micron Technology], MT48H16M16LF Datasheet - Page 67

• Manufacturer Part Number: MT48H16M16LF
• Description: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
• Manufacturer: MICRON [Micron Technology]

Figure 48:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
COMMAND
BA0, BA1
ADDR
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
Single WRITE – with Auto Precharge
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
Notes:
t CK
T1
NOP 3
1. For this example, BL = 1, and the WRITE burst is followed by a manual PRECHARGE.
2. 15ns is required between <D
3. WRITE command not allowed or
t CL
See Table 11 on page 46.
T2
NOP 3
t CH
T3
NOP 3
ENABLE AUTO PRECHARGE
t CMS
COLUMN m
t DS
BANK
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
WRITE
T4
D
IN
t CMH
m
t DH
67
IN
m> and the PRECHARGE command, regardless of frequency.
t WR
t
RAS would be violated.
T5
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T6
NOP
T7
NOP
t RP
©2006 Micron Technology, Inc. All rights reserved.
BANK
ROW
ROW
Timing Diagrams
T8
ACTIVE
T9
NOP
DON’T CARE