MT48LC32M4A2FC-8ELIT MICRON [Micron Technology], MT48LC32M4A2FC-8ELIT Datasheet - Page 33

• Manufacturer Part Number: MT48LC32M4A2FC-8ELIT
• Description: SYNCHRONOUS DRAM
• Manufacturer: MICRON [Micron Technology]

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature,
Operating Temperature,
Storage Temperature (plastic) ................ -55°C to +150°C
Power Dissipation .......................................................... 1W
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 36; V
I
(Notes: 1, 5, 6, 11, 13; notes appear on page 36; V
128Mb: x4, x8, x16 SDRAM
128MSDRAM_E.p65 – Rev. E; Pub. 1/02
PARAMETER/CONDITION
Supply Voltage
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Input Leakage Current:
Any input 0V ≤ V
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled; 0V ≤ V
Output Levels:
Output High Voltage (I
Output Low Voltage (I
PARAMETER/CONDITION
Operating Current: Active Mode;
Burst = 2; READ or WRITE;
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
Operating Current: Burst Mode; Continuous burst;
READ or WRITE; All banks active
Auto Refresh Current
CKE = HIGH; CS# = HIGH
Self Refresh Current:
CKE ≤ 0.2V
DD
T
T
A
A
SPECIFICATIONS AND CONDITIONS
Relative to V
Relative to V
(commercial) ........................................ 0°C to +70°C
(extended; IT parts) ......................... -40°C to +85°C
DD
/V
DD
SS
SS
IN
Q Supply
........................................ -1V to +4.6V
........................................ -1V to +4.6V
≤ V
DD
OUT
OUT
= 4mA)
t
= -4mA)
RC =
t
RC (MIN)
Low power (L)
t
t
Standard
DD
RFC =
RFC = 15.625µs
/V
DD
t
RCD met;
Q = +3.3V ±0.3V)
t
RFC (MIN)
OUT
DD
/V
≤ V
DD
33
Q = +3.3V ±0.3V)
DD
Q
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
SYMBOL
SYMBOL -7E
DD
V
V
V
V
I
/V
I
I
I
I
I
I
I
I
OZ
I
DD
DD
DD
DD
DD
DD
DD
DD
OH
OL
IH
I
IL
DD
1
2
3
4
5
6
7
7
Q
160
165
330
128Mb: x4, x8, x16
2
3
2
1
50
MIN
-0.3
2.4
-5
-5
3
2
–
MAX
150
150
310
50
-75
2
3
2
1
V
DD
MAX
3.6
0.8
0.4
5
5
–
140
140
270
+ 0.3
-8E
40
2
3
2
1
©2001, Micron Technology, Inc.
UNITS NOTES
UNITS NOTES
SDRAM
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
V
V
V
V
V
18, 19,
19, 32
19, 32
19, 32
32, 33
3, 18,
3, 12,
3, 18,
3, 12,
22
22
32
4