MC68HC908AB32 MOTOROLA [Motorola, Inc], MC68HC908AB32 Datasheet - Page 385

• Manufacturer Part Number: MC68HC908AB32
• Description: HCMOS Microcontroller Unit
• Manufacturer: MOTOROLA [Motorola, Inc]

23.13 FLASH Memory Characteristics
MC68HC908AB32
MOTOROLA
Notes:
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH row erase endurance
FLASH row program endurance
FLASH data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
FLASH memory.
the FLASH memory.
by clearing HVEN to logic 0.
t
this many erase / program cycles.
this many erase / program cycles.
time specified.
rcv
Read
HV
HV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump,
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the frequency range for which the FLASH memory can be read.
—
Rev. 1.0
Characteristic
Freescale Semiconductor, Inc.
(8)
For More Information On This Product,
(6)
nvs
(7)
+ t
Erase
nvh
Go to: www.freescale.com
MErase
Electrical Specifications
+ t
(Min), there is no erase-disturb, but it reduces the endurance of the
pgs
(Min), there is no erase-disturb, but it reduces the endurance of
+ (t
PROG
64)
t
Symbol
t
MErase
f
Erase
Read
t
t
t
PROG
t
rcv
HV
t
t
t
t
nvhl
—
nvh
pgs
—
—
—
HV
nvs
(4)
(5)
(1)
(2)
max.
(3)
10,000
10,000
Min
32k
100
10
30
10
—
1
1
4
5
5
1
FLASH Memory Characteristics
8.4M
Electrical Specifications
Max
40
—
—
—
—
—
—
—
—
—
—
—
4
Technical Data
Cycles
Cycles
Years
Unit
MHz
ms
ms
ms
Hz
s
s
s
s
s
s
385