MC68HC908AB32 MOTOROLA [Motorola, Inc], MC68HC908AB32 Datasheet - Page 61

• Manufacturer Part Number: MC68HC908AB32
• Description: HCMOS Microcontroller Unit
• Manufacturer: MOTOROLA [Motorola, Inc]

4.5 FLASH Page Erase Operation
MC68HC908AB32
MOTOROLA
—
Rev. 1.0
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Use this step-by-step procedure to erase a page (128 bytes) of FLASH
memory to read as logic 1:
1. Set the ERASE bit, and clear the MASS bit in the FLASH control
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the page address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
Setting this read/write bit configures the 32K-byte FLASH array for
mass erase operation.
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
Freescale Semiconductor, Inc.
For More Information On This Product,
1 = MASS erase operation selected
0 = MASS erase operation unselected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
register.
range desired.
Go to: www.freescale.com
FLASH Memory
nvs
Erase
nvh
(min. 10 s)
(min. 5 s)
(min. 1ms)
FLASH Page Erase Operation
FLASH Memory
Technical Data
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