MC68HC908JK3EMP MOTOROLA [Motorola, Inc], MC68HC908JK3EMP Datasheet - Page 222

• Manufacturer Part Number: MC68HC908JK3EMP
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

MC68HLC908JL3E/JK3E/JK1E
A.6.6 Memory Characteristics
Technical Data
222
NOTES:
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH row erase endurance
FLASH row program endurance
FLASH data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
FLASH memory.
the FLASH memory.
by clearing HVEN to logic 0.
t
this many erase / program cycles.
this many erase / program cycles.
time specified.
rcv
Read
HV
HV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump,
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the frequency range for which the FLASH memory can be read.
Characteristic
The FLASH memory can only be read at an operating voltage of 2.2 to
5.5V. Program and erase are achieved at an operating voltage of 2.7 to
5.5V. The program and erase parameters in
V
DD
(8)
= 2.7 to 5.5V only.
Table A-6. Memory Characteristics
(6)
nvs
(7)
+ t
MC68HLC908JL3E/JK3E/JK1E
Erase
nvh
MErase
+ t
(Min), there is no erase-disturb, but it reduces the endurance of the
pgs
(Min), there is no erase-disturb, but it reduces the endurance of
+ (t
PROG
×
32) ≤ t
t
Symbol
MErase
t
f
Erase
Read
t
V
t
t
PROG
rcv
HV
t
t
t
t
nvhl
HV
RDR
—
nvh
pgs
—
—
—
nvs
(4)
(5)
MC68H(R)C908JL3E/JK3E/JK1E
(1)
(2)
max.
(3)
Min
32k
100
10k
10k
1.3
10
30
10
—
1
1
4
5
5
1
Table A-6
Max
8M
40
—
—
—
—
—
—
—
—
—
—
—
—
4
are for
cycles
cycles
years
MHz
Unit
MOTOROLA
ms
ms
ms
Hz
µ s
µ s
µ s
µ s
µ s
µ s
V
—
Rev. 2.0