AM29PDL128G70 SPANSION [SPANSION], AM29PDL128G70 Datasheet - Page 32

• Manufacturer Part Number: AM29PDL128G70
• Description: 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
• Manufacturer: SPANSION [SPANSION]

July 29, 2002
(Double Word
Addresses
Mode)
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
(Word Mode)
Addresses
3Ah
3Ch
3Eh
4Ah
4Ch
36h
38h
40h
42h
44h
46h
48h
000Ah
0027h
0036h
0000h
0000h
0004h
0000h
0000h
0005h
0000h
0004h
0000h
Data
Table 11. System Interface String
P R E L I M I N A R Y
Am29PDL128G
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
PP
Description
PP
N
times typical
pin present)
pin present)
N
N
times typical (00h = not supported)
N
times typical
ms (00h = not supported)
N
N
times typical
N
N
µ
s (00h = not supported)
ms
µs
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