AM29PDL128G70 SPANSION [SPANSION], AM29PDL128G70 Datasheet - Page 57

• Manufacturer Part Number: AM29PDL128G70
• Description: 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
• Manufacturer: SPANSION [SPANSION]

AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
56
JEDEC
t
t
t
t
t
t
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
t
DVWH
WHDX
GHWL
WHEH
WLWH
WLAX
WHDL
AVWL
ELWL
AVAV
Parameter
t
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
Std.
t
t
OEPH
GHWL
t
t
BUSY
t
SR/W
t
t
t
WPH
t
ASO
t
t
t
VCS
t
AHT
WC
WP
AS
AH
DS
DH
CS
CH
RB
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high
during toggle bit polling
Data Setup Time
Data Hold Time
Output Enable High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation (Note 2)
Accelerated Programming Operation,
Double Word or Word (Note 2)
Sector Erase Operation (Note 2)
V
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
CC
Setup Time (Note 1)
P R E L I M I N A R Y
Am29PDL128G
Double Word
Word
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Min
Min
70R, 70
70
12
35
Speed Options
12.6
10.5
0.2
80
80
15
35
45
20
35
30
16
50
90
0
0
0
0
0
0
0
0
July 29, 2002
90
90
15
45
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ns
ns