AM29PDL128G70 SPANSION [SPANSION], AM29PDL128G70 Datasheet - Page 66

• Manufacturer Part Number: AM29PDL128G70
• Description: 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
• Manufacturer: SPANSION [SPANSION]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 3.0 V V
2. Under worst case conditions of 90 C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
FORTIFIED BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
July 29, 2002
Parameter
Sector Erase Time
Chip Erase Time
Double Word Program Time
Word Program Time
Accelerated Double Word Program Time
Accelerated Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
Parameter Symbol
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
14–17
Current
for further information on command definitions.
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
Double Word Mode
Description
SS
SS
Control Pin Capacitance
Parameter Description
CC
Word Mode
on all pins except I/O pins
on all I/O pins
Output Capacitance
. Test conditions: V
Input Capacitance
CC
= 2.7 V, 1,000,000 cycles.
P R E L I M I N A R Y
Typ (Note 1)
CC
Am29PDL128G
= 3.0 V, one pin at a time.
105.7
16.6
12.6
14.5
10.5
69.6
100
0.2
Max (Note 2)
Test Setup
V
V
V
330
210
120
240
208
317
OUT
10
IN
IN
= 0
= 0
= 0
Test Conditions
–100 mA
–1.0 V
–1.0 V
Min
CC
150 C
125 C
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
µs
µs
TBD
TBD
TBD
Typ
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Comments
V
TBD
TBD
TBD
Max
+100 mA
CC
Min
13 V
Max
10
20
+ 1.0 V
Unit
Years
Years
pF
pF
pF
Unit
65